Publications 2012
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T.-W. Kim, D.-H Kim, D.-H. Koh, R. J. W. Hill, R.T.P. Lee, M.H Wong, T. Cunningham, J. A. del Alamo, S. K. Banerjee, S. Oktyabrsky, A. Greene, Y. Ohsawa, Y. Trickett, G Nakamura, Q. Li, K.M. Lau, C. Hobbs, P. D. Kirsch and R. Jammy, "ETB-QW InAs MOSFET with scaled body for improved electrostatics", Electron Devices Meeting (IEDM), 2012 IEEE International 10-13 Dec. 2012
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Xiuju Zhou, Qiang Li, Chak Wah Tang, Kei May Lau, "30nm enhancement-mode In0.53Ga0.47As MOSFETs on Si substrates grown by MOCVD exhibiting high transconductance and low on-resistance", Electron Devices Meeting (IEDM), 2012 IEEE International, 10-13 Dec. 2012
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Tongde Huang, Xueliang Zhu, Kei May Lau, "High-performance AlN/GaN MOSHEMTs with regrown ohmic contacts by MOCVD", 2012 IEEE 11th International Conference, Oct. 29 2012-Nov. 1 2012
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X. Lu, J. Ma, X. Zhu, C. M. Lee, C. P. Yue, and K. M. Lau, "A novel GaN-based monolithic SAW/HEMT oscillator on silicon", Proc. IEEE Int. Ultrason. Symp., Oct 2012
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Shaoqi Feng, Yu Geng, Kei May Lau, and Andrew W. Poon, "Epitaxial III-V-on-silicon waveguide butt-coupled photodetectors", Optics Letters, Vol. 37, No. 19, October 2012
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Xiuju Zhou, Qiang Li, Chak Wah Tang, and Kei May Lau, "30-nm Inverted In0.53Ga0.47As MOSHEMTs on Si Substrate Grown by MOCVD With Regrown Source/Drain", IEEE Electron Device Letters, Vol. 33, No. 10, October 2012
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Xiuju Zhou, Qiang Li, Chak Wah Tang, and Kei May Lau, "Inverted-Type InGaAs Metal-Oxide-Semiconductor High-Electron-Mobility Transistor on Si Substrate with Maximum Drain Current Exceeding 2A/mm", Appl. Phys. Express, Vol. 5, 2012
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Qiang Li, Xiuju Zhou, Chak Wah Tang, and Kei May Lau, "High-Performance Inverted In0.53Ga0.47As MOSHEMTs on a GaAs Substrate With Regrown Source/Drain by MOCVD", IEEE Electron Device Letters, Vol. 33, No. 9, September 2012
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Tongde Huang, Xueliang Zhu, and Kei May Lau, "Enhancement-Mode AlN/GaN MOSHFETs on Si Substrate With Regrown Source/Drain by MOCVD", IEEE Electron Device Letters, Vol. 33, No. 8, August 2012
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Yu Geng, Shaoqi Feng, Andrew W. Poon, and Kei May Lau, "Growth of butt-coupled p-i-n InGaAs waveguide photodetectors by MOCVD", The 2012 Electronic Materials Conference (EMC), PA, USA, Jun 2012
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Xiuju Zhou, Chak Wah Tang, Qiang Li, and Kei May Lau, "In0.53Ga0.47As MOS-HEMTs on GaAs and Si substrates grown by MOCVD", Physica Status Solidi (c), Vol. 209, No. 7, April 2012
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Ming Li, Haiou Li, Chak Wah Tang, and Kei May Lau, "Fabrication of 100-nm Metamorphic AlInAs/GaInAs HEMTs Grown on Si Substrates by MOCVD", IEEE Electron Device Letters, Vol. 33, No. 4, April 2012
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Qiang Li, Xiuju Zhou, Chak Wah Tang and Kei May Lau, "Inverted-type InAlAs/InGaAs MOSHEMT with Regrown Source/Drain Exhibiting High Current and Low On-resistance", the 2012 International Conference on Compound Semiconductor Manufacturing Technology, Boston, USA, April 2012
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Xinbo Zou, Ka Ming Wong, Naisen Yu, Peng Chen, and Kei May Lau, "Improved crystalline quality and light output power of GaN-based lightemitting diodes grown on Si substrate by buffer optimization", Physica Status Solidi (c), Vol. 9, No. 3-4, Mar 2012
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Tongde Huang, Ka Ming Wong, Ming Li, Xueliang Zhu, and Kei May Lau, "Effect of post-gate RTA on leakage current (Ioff) in GaN MOSHEMTs", Physica Status Solidi (c), Vol. 9, No. 3-4, Mar 2012
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Tongde Huang, Xueliang Zhu, Ka Ming Wong, and Kei May Lau, "Low-Leakage-Current AlN/GaN MOSHFETs Using Al2O3 for Increased 2DEG", IEEE Electron Device Letters, Vol. 33, No. 2, Feb 2012
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Yan Gao, Zhenyu Zhong, Shaoqi Feng, Yu Geng, Hu Liang, Andrew W. Poon and Kei May Lau, "High-Speed Normal-Incidence p-i-n InGaAs Photodetectors Grown on Silicon Substrates by MOCVD", IEEE Photonics Technology Letters, Vol. 24, No. 4, Feb 2012