Publications 2004
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D. Wang, Y. Dikme, S. Jia, P. van Gemmern, Y. C. Lin, K. J. Chen, and K. M. Lau, P. van Gemmern, Y. C. Lin, H. Kalisch, R. H. Jansen, and M. Heuken, "Characterization of GaN grown on patterned Si(111) substrate," , J. of Crystal Growth, vol.272/1-4 pp. 489-495, 2004.
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Z. H. Feng, Y. Qi, Z. D. Lu, and K. M. Lau, “GaN-Based Blue-Light Emitting Diodes Grown and Fabricated on Patterned Sapphire Substrates Using Metalorganic Vapor Phase Epitaxy,” , J. of Crystal Growth, vol. 272/1-4 pp. 327-332, 2004.
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Y. D. Qi, H. Liang, W. Tang, Z. D. Lu, and K. M. Lau, “Dual wavelength emission InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy,” , J. of Crystal Growth, vol. 272, pp.333-340 (2004)
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Z. H. Feng, Y. G. Zhou, S. J. Cai, and K. M. Lau, “Enhanced thermal stability of the two-dimensional electron gas in GaN/AlGaN/GaN heterostructures by Si3N4 surface passivation induced strain solidification,” , Appl. Phys. Lett., vol. 85, pp.5248-5250, 2004.
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J. Zhang and K. M. Lau, “GaAs Esaki junctions with autocompensated impurities in the n-side by Metal-organic-chemical-vapor-deposition,” , Appl. Phys. Lett., vol. 85, pp.4415-4417, 2004.
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J. M. Hwang , K. Y. Ho , Z. H. Hwang , W. H. Hung , K. M. Lau, and H. L. Hwang, “Efficient wet etching of GaN and p-GaN assisted with chopped UV source,” , Superlattices and Microstructures, vol. 35, pp.45-57, 2004.
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J. Zhang, N. G. Anderson, and K. M. Lau, “Al0.10Ga0.90As /GaAs Microcoolers,” , IEEE, Electron Device Letters, vol. 25, pp. 345-347, 2004.
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H. K. Kim, T. Y. Seong, I. Adesida, C. W. Tang, and K. M. Lau, “Low-resistance Pt/Pd/Au ohmic contacts to p-type AlGaN,” , Appl. Phys. Lett., vol. 84, pp.1710-1712, 2004.
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J. Liu, Y. G. Zhou, R. M. Chu, Y. Cai, K. J. Chen, and K. M. Lau, "Al0.3Ga0.7N/Al0.05Ga0.95N/GaN Composite-Channel HEMTs with Enhanced Linearity,", 2004 International Electron Device Meeting (IEDM04), San Francisco, USA, Dec. 13-15, 2004.
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C. S. Chu, Y. G. Zhou, R. M. Chu, K. J. Chen, and K. M. Lau, "GaN-based radio-frequency planar inter-digitated metal-insulator-semiconductor varactors,", The 7th Int. Conf. on Solid-State and Integrated-Circuit Technology (ICSICT2004), Beijing, China, Oct. 18-21, 2004.