Publications 2003

R. M. Chu, Y. G. Zhou, K. J. Chen, and K. M. Lau, "Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures," (c), No. 7, pp. 24002403, 2003.

J. Zhang, N.Anderson, and K. M. Lau, “AlGaAs superlattice microcoolers,”, 2003.

L.S. Yu, D. Qiao, S. S. Lau, Y. Qi, and K. M. Lau, “A Study of Schottky Barrier of Ni on pGaN,” Appl. Phys. Lett., vol. 79, p.4536 –4538, 2001.

Y. Qi, C. Musante, K. M. Lau, L. Smith, R. Odedra, and R. Kanjolia, “OMVPE Growth of ptype GaN Using Solution Cp2Mg,” IEEE/TMS J. Electronic Materials, vol. 30, p. 1382, 2001.

C. R. Lutz, J. Kanaley, and K. M. Lau, "Intersubband Absorption Characteristics in OMVPE Grown DeltaDoped GaAs/AlGaAs Multiple Quantum Well Structures," IEEE/TMS J. Electronic Materials, vol. 29, p.225, 2000.
Representative Journal Publications
Photonic, Microwave and Millimeter Wave Devices

L.S. Yu, D. Qiao, S. S. Lau, Y. Qi, and K. M. Lau, “A Study of Schottly Barrier of Ni on pGaN,” Applied Physics Lett., vol. 79, p.4536 –4538, 2001.

C. R. Lutz, J. Kanaley, and K.M. Lau, "Intersubband Absorption Characteristics in OMVPE Grown DeltaDoped GaAs/AlGaAs Multiple Quantum Well Structures," IEEE/TMS J. Electronic Materials, vol. 29, p.225, 2000.

T. R. Tolliver, N. G. Anderson, F. Agahi, and K. M. Lau, “Characteristic temperature study of GaAsP/AlGaAs tensile strained quantum well lasers,” J. Appl. Phys., vol. 88, p.54005409, 2000.

F. Agahi, A. Baliga, K. M. Lau and N. G. Anderson, "Dependence of Polarization Mode and Threshold Current on Tensile Strain in AlGaAS/GaAsP Quanutm Well Lasers," Solid State Electronics, vol. 41, p. 647649, 1997.

R. Basco, A. Prabhu, K. S. Yngvesson and K. M. Lau, “Monolithic Integration of AlGaAs/GaAs 2DEG 94GHz Mixers on Quartz Substrate by Epitaxial LiftOff,” IEEE Trans. Electron Devices, vol. ED44, p. 1116, 1997.

F. Agahi, A Baliga, K. M. Lau and N. G. Anderson, "TensileStrainedBarrier GaAsP/GaAs Single Quantum Well Lasers," Appl. Phys. Lett., vol. 68, p. 37783780, 1996.

E. Perez, V. Bellani, S. Zimmermann, L. Munoz, L. Vina, E. S. Koteles and K. M. Lau "Exciton dynamics and spinflip in tensilestrained quantum wells," Solid State Electron., vol. 40, p. 737740, 1996.

Baliga, F. Agahi, N. G. Anderson, K. M. Lau and S. Cadambi, "Tensile Strain and Threshold Currents in GaAsPAlGaAS Single Quantum Well Lasers," IEEE J. Quantum Electronics, vol. QE32, p. 2937, 1996.

R. Lutz, F. Agahi and K. M. Lau, "Resonant Tunneling Injection Quantum Well Lasers," IEEE Photon. Technol. Lett., vol. PTL7, p. 596598, 1995.

F. Agahi, K. M. Lau, H. K. Choi, A. Baliga, N. G. Anderson“HighPerformance AlGaAs/GaAsP TensileStrained QuantumWell Laser Diodes, IEEE Photon. Technol. Lett., vol. PTL7, p.140143, February 1995.

F. Agahi, C. R. Lutz and K. M. Lau, "Improvement of GasSwitching Abruptness for Atmospheric Pressure OMVPE” J. Crystal Growth, vol. 139, p. 344350, 1994.

L. Vina, L. Munoz, N. Mestres, E. S. Koteles, D. C. Bertolet and K. M. Lau, "Magnetooptical Properties of biaxially Strained Quanmm Wells," Philos. Mag., B, vol. 70, No. 3, p. 397408, 1994.

F. Agahi, K. M. Lau, E. S. Koteles, A. Baliga and N. G. Anderson, "GaAs1xPx/GaAs Quantum Well Structures with TensileStrained Barriers," IEEE J. Quantum Electronics, vol. QE30, p. 459465, February 1994.

N. Gomatam, N. G. Anderson, F. Agahi, C. F. Musante and K. M. Lau, "Comparison of TensileStrained and LatticeMatched GaAs(P)/AlGaAs QuantumWell Reflection Modulators," Appl. Phys. Lett., vol. 63, p. 36163618, December 1993.

J. X. Yang, K. M. Lau and K. S. Yngvesson, “Focal Plane Arrays for Submillimeter Waves Using TwoDimensional Electron Gas Elements," Remote Sensing Reviews, vol. 8, p. 29, 1993.

F. Agalli, J. X. Yang, K. M. Lau and K. S. Yngvesson, “High Qua1ity TwoDimenstonal Electron Gas in AlGaAs/GaAs Heterostructures by LPOMVPE," IEEE Trans. Electron Devices, vol. ED40, p. 502, 1993.

J. C. Liou and K. M. Lau, "Analysis of Slow Wave Transmission Lines on Multilayered Semiconductor Structures Including Conductor Loss," IEEE Trans. Microwave Theory Tech., vol. MTT41, May 1993.

J. X. Yang, F. Agahi, D. Dai, C. Musante, W. Grammer, K. M. Lau and K. S. Yngvesson, "WideBandwidth Electron Bolometric Mixers : A 2DEG Prototype and Potential for LowNoise THz Receivers," IEEE Trans. Microwave Theory Tech., vol. MTT41, p. 581, 1993.

K. M. Lau and W. Xu, "Optically Pumped Submillimeter Wave Semiconductor Lasers," IEEE Quantum Electronics, vol. QE28, p. 1773, 1992.
OMVPE and Heterostructures

Y. Qi, C. Musante, K. M. Lau, L. Smith, Odedra, and R. Kanjolia, “OMVPE Growth of ptype GaN Using Solution Cp2Mg,” IEEE/TMS J. Electronic Materials, p. 1382, 2001.

E. Perez, L. Vina, E. S. Koteles, K. M. Lau, A. Di Carlo, P. Lugli, “Exciton dynamics and valence band mixing in tensilestrained semiconductor quantum wells,” Semiconductor Science and Technology, vol.15, p. 189196, 2000.

N. G. Anderson, F. Agahi, A. Baliga and K. M. Lau, "Valence Band Offsets in Strained GaAs1xPx/GaAs Heterostructures," IEEE/TMS J. Electronic Materials, vol. 24, p. 713, 1995.

C. M. Hanson, R. Basco, F. Agahi, K. M. Lau, R. T. Lareau and T. P. Monahan." Anomalous thin InGaAs layer at the Epilayer/Substrate Interface Of AlGaAs/GaAs Twodimensional Electron Gas Structures Grown by OMVPE" IEEE/TMS J. Electronic Materials, vol. 23, p. 649652, 1994.

R. Basco, F. Agahi and K. M. Lau, "UltraHigh Mobility TwoDimensional Electron Gas AlGaAs/GaAs heterostructures by Organometallic Chemical Vopor Deposition," Appl. Phys. Lett., vol. 63, p. 19601962, October 1993.

B. N. Gomatam, N. G. Anderson, F. Agahi, C. F. Musante, and K. M. Lau, "Fieldinduced Absorption Edge Merging in Tensile Strained GaAsP Quantum Wells,” Appl. Phys. Lett., vol. 62, p. 3473, 1993.

L. Vina, L. Munoz, N. Mestres, E. S. Koteles, A. Ghiti, E. P. O'Reilly, D. C. Bertolet, and K. M. Lau, "Valence Band Shape Modification due to Band Coupling in Strained Quantum Wells," Phys. Rev., B, vol. 47, p. 13926, 1993.

B. E. Landini, F. Agahi, and K. M. Lau, "Optimization of Undoped GaAs by LowPressure OMVPE Using Trimethylgallium," IEEE/TMS Electronic Materials, vol. 21, p.947, 1992.

D.C. Bertolet, J.K. Hsu, K. M. Lau, E.S. Koteles, "Effects of Growth Interruption on the Optical Properties of AlGaAs/GaAs and GaAs/InGaAs Quantum Wells Grown by APOMCVD", J. Electronic Materials, vol.20, p.197, 1991.

S.H. Jones, L.K. Seidel, K. M. Lau, and M. Harold, "Patterned Substrate Epitaxy Surface Shapes", J. Crystal Growth, vol. 108, p. 73, 1991.

E.S. Koteles, D.A. Owens, D.C. Bertolet, J.K. Hsu, and K. M. Lau, "Reversal of Light and HeavyHole Valence Bands in Strained GaAsP/AlGaAs Quantum Wells", Surface Science, vol. 228, p.314, 1990.

D.C. Bertolet, J.K. Hsu, F. Agahi, and K. M. Lau, "Critical Thickness of GaAs/InGaAs and AlGaAs/GaAsP Strained Quantum Wells Grown by Organometallic Chemical Vopor Deposition", J. Electronic Materials, vol.19, p.967, 1990.

D. C. Bertolet, J. K. Hsu, and K. M. Lau, "Tailoring of Hole Eigenenergies in Strained GaAsP/AlGaAs Single Quantum Wells Grown by Atmospheric Pressure OMCVD", Appl. Phys. Lett., vol. 53, p.2501, 1988.

D. C. Bertolet, J. K. Hsu, K. M. Lau, E. S. Koteles, and D. Owens, "Exciton Photoluminescence Linewidths in Very Narrow AlGaAs/GaAs and GaAs/InGaAs Quantum Wells", J. Appl. Phys., vol. 64, p.6562, 1988.