Publications 2003
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R. M. Chu, Y. G. Zhou, K. J. Chen, and K. M. Lau, "Admittance Characterization and Analysis of Trap States in AlGaN/GaN Heterostructures," (c), No. 7, pp. 2400-2403, 2003.
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J. Zhang, N.Anderson, and K. M. Lau, “AlGaAs superlattice microcoolers,”, 2003.
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L.S. Yu, D. Qiao, S. S. Lau, Y. Qi, and K. M. Lau, “A Study of Schottky Barrier of Ni on p-GaN,” Appl. Phys. Lett., vol. 79, p.4536 –4538, 2001.
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Y. Qi, C. Musante, K. M. Lau, L. Smith, R. Odedra, and R. Kanjolia, “OMVPE Growth of p-type GaN Using Solution Cp2Mg,” IEEE/TMS J. Electronic Materials, vol. 30, p. 1382, 2001.
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C. R. Lutz, J. Kanaley, and K. M. Lau, "Intersubband Absorption Characteristics in OMVPE Grown Delta-Doped GaAs/AlGaAs Multiple Quantum Well Structures," IEEE/TMS J. Electronic Materials, vol. 29, p.225, 2000.
Representative Journal Publications
Photonic, Microwave and Millimeter Wave Devices
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L.S. Yu, D. Qiao, S. S. Lau, Y. Qi, and K. M. Lau, “A Study of Schottly Barrier of Ni on p-GaN,” Applied Physics Lett., vol. 79, p.4536 –4538, 2001.
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C. R. Lutz, J. Kanaley, and K.M. Lau, "Intersubband Absorption Characteristics in OMVPE Grown Delta-Doped GaAs/AlGaAs Multiple Quantum Well Structures," IEEE/TMS J. Electronic Materials, vol. 29, p.225, 2000.
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T. R. Tolliver, N. G. Anderson, F. Agahi, and K. M. Lau, “Characteristic temperature study of GaAsP/AlGaAs tensile strained quantum well lasers,” J. Appl. Phys., vol. 88, p.5400-5409, 2000.
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F. Agahi, A. Baliga, K. M. Lau and N. G. Anderson, "Dependence of Polarization Mode and Threshold Current on Tensile Strain in AlGaAS/GaAsP Quanutm Well Lasers," Solid State Electronics, vol. 41, p. 647-649, 1997.
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R. Basco, A. Prabhu, K. S. Yngvesson and K. M. Lau, “Monolithic Integration of AlGaAs/GaAs 2DEG 94GHz Mixers on Quartz Substrate by Epitaxial Lift-Off,” IEEE Trans. Electron Devices, vol. ED-44, p. 11-16, 1997.
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F. Agahi, A Baliga, K. M. Lau and N. G. Anderson, "Tensile-Strained-Barrier GaAsP/GaAs Single Quantum Well Lasers," Appl. Phys. Lett., vol. 68, p. 3778-3780, 1996.
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E. Perez, V. Bellani, S. Zimmermann, L. Munoz, L. Vina, E. S. Koteles and K. M. Lau "Exciton dynamics and spin-flip in tensile-strained quantum wells," Solid State Electron., vol. 40, p. 737-740, 1996.
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Baliga, F. Agahi, N. G. Anderson, K. M. Lau and S. Cadambi, "Tensile Strain and Threshold Currents in GaAsP-AlGaAS Single Quantum Well Lasers," IEEE J. Quantum Electronics, vol. QE-32, p. 29-37, 1996.
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R. Lutz, F. Agahi and K. M. Lau, "Resonant Tunneling Injection Quantum Well Lasers," IEEE Photon. Technol. Lett., vol. PTL-7, p. 596-598, 1995.
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F. Agahi, K. M. Lau, H. K. Choi, A. Baliga, N. G. Anderson“High-Performance AlGaAs/GaAsP Tensile-Strained Quantum-Well Laser Diodes, IEEE Photon. Technol. Lett., vol. PTL-7, p.140-143, February 1995.
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F. Agahi, C. R. Lutz and K. M. Lau, "Improvement of Gas-Switching Abruptness for Atmospheric Pressure OMVPE” J. Crystal Growth, vol. 139, p. 344-350, 1994.
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L. Vina, L. Munoz, N. Mestres, E. S. Koteles, D. C. Bertolet and K. M. Lau, "Magneto-optical Properties of biaxially Strained Quanmm Wells," Philos. Mag., B, vol. 70, No. 3, p. 397-408, 1994.
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F. Agahi, K. M. Lau, E. S. Koteles, A. Baliga and N. G. Anderson, "GaAs1-xPx/GaAs Quantum Well Structures with Tensile-Strained Barriers," IEEE J. Quantum Electronics, vol. QE-30, p. 459-465, February 1994.
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N. Gomatam, N. G. Anderson, F. Agahi, C. F. Musante and K. M. Lau, "Comparison of Tensile-Strained and Lattice-Matched GaAs(P)/AlGaAs Quantum-Well Reflection Modulators," Appl. Phys. Lett., vol. 63, p. 3616-3618, December 1993.
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J. X. Yang, K. M. Lau and K. S. Yngvesson, “Focal Plane Arrays for Submillimeter Waves Using Two-Dimensional Electron Gas Elements," Remote Sensing Reviews, vol. 8, p. 29, 1993.
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F. Agalli, J. X. Yang, K. M. Lau and K. S. Yngvesson, “High Qua1ity Two-Dimenstonal Electron Gas in AlGaAs/GaAs Heterostructures by LP-OMVPE," IEEE Trans. Electron Devices, vol. ED-40, p. 502, 1993.
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J. C. Liou and K. M. Lau, "Analysis of Slow Wave Transmission Lines on Multi-layered Semiconductor Structures Including Conductor Loss," IEEE Trans. Microwave Theory Tech., vol. MTT-41, May 1993.
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J. X. Yang, F. Agahi, D. Dai, C. Musante, W. Grammer, K. M. Lau and K. S. Yngvesson, "Wide-Bandwidth Electron Bolometric Mixers : A 2-DEG Prototype and Potential for Low-Noise THz Receivers," IEEE Trans. Microwave Theory Tech., vol. MTT-41, p. 581, 1993.
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K. M. Lau and W. Xu, "Optically Pumped Submillimeter Wave Semiconductor Lasers," IEEE Quantum Electronics, vol. QE-28, p. 1773, 1992.
OMVPE and Heterostructures
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Y. Qi, C. Musante, K. M. Lau, L. Smith, Odedra, and R. Kanjolia, “OMVPE Growth of p-type GaN Using Solution Cp2Mg,” IEEE/TMS J. Electronic Materials, p. 1382, 2001.
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E. Perez, L. Vina, E. S. Koteles, K. M. Lau, A. Di Carlo, P. Lugli, “Exciton dynamics and valence band mixing in tensile-strained semiconductor quantum wells,” Semiconductor Science and Technology, vol.15, p. 189-196, 2000.
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N. G. Anderson, F. Agahi, A. Baliga and K. M. Lau, "Valence Band Offsets in Strained GaAs1-xPx/GaAs Heterostructures," IEEE/TMS J. Electronic Materials, vol. 24, p. 713, 1995.
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C. M. Hanson, R. Basco, F. Agahi, K. M. Lau, R. T. Lareau and T. P. Monahan." Anomalous thin InGaAs layer at the Epi-layer/Substrate Interface Of AlGaAs/GaAs Two-dimensional Electron Gas Structures Grown by OMVPE" IEEE/TMS J. Electronic Materials, vol. 23, p. 649-652, 1994.
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R. Basco, F. Agahi and K. M. Lau, "Ultra-High Mobility Two-Dimensional Electron Gas AlGaAs/GaAs heterostructures by Organometallic Chemical Vopor Deposition," Appl. Phys. Lett., vol. 63, p. 1960-1962, October 1993.
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B. N. Gomatam, N. G. Anderson, F. Agahi, C. F. Musante, and K. M. Lau, "Field-induced Absorption Edge Merging in Tensile Strained GaAsP Quantum Wells,” Appl. Phys. Lett., vol. 62, p. 3473, 1993.
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L. Vina, L. Munoz, N. Mestres, E. S. Koteles, A. Ghiti, E. P. O'Reilly, D. C. Bertolet, and K. M. Lau, "Valence Band Shape Modification due to Band Coupling in Strained Quantum Wells," Phys. Rev., B, vol. 47, p. 13926, 1993.
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B. E. Landini, F. Agahi, and K. M. Lau, "Optimization of Undoped GaAs by Low-Pressure OMVPE Using Trimethylgallium," IEEE/TMS Electronic Materials, vol. 21, p.947, 1992.
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D.C. Bertolet, J.-K. Hsu, K. M. Lau, E.S. Koteles, "Effects of Growth Interruption on the Optical Properties of AlGaAs/GaAs and GaAs/InGaAs Quantum Wells Grown by AP-OMCVD", J. Electronic Materials, vol.20, p.197, 1991.
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S.H. Jones, L.K. Seidel, K. M. Lau, and M. Harold, "Patterned Substrate Epitaxy Surface Shapes", J. Crystal Growth, vol. 108, p. 73, 1991.
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E.S. Koteles, D.A. Owens, D.C. Bertolet, J.K. Hsu, and K. M. Lau, "Reversal of Light- and Heavy-Hole Valence Bands in Strained GaAsP/AlGaAs Quantum Wells", Surface Science, vol. 228, p.314, 1990.
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D.C. Bertolet, J.-K. Hsu, F. Agahi, and K. M. Lau, "Critical Thickness of GaAs/InGaAs and AlGaAs/GaAsP Strained Quantum Wells Grown by Organometallic Chemical Vopor Deposition", J. Electronic Materials, vol.19, p.967, 1990.
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D. C. Bertolet, J. K. Hsu, and K. M. Lau, "Tailoring of Hole Eigenenergies in Strained GaAsP/AlGaAs Single Quantum Wells Grown by Atmospheric Pressure OMCVD", Appl. Phys. Lett., vol. 53, p.2501, 1988.
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D. C. Bertolet, J. K. Hsu, K. M. Lau, E. S. Koteles, and D. Owens, "Exciton Photoluminescence Linewidths in Very Narrow AlGaAs/GaAs and GaAs/InGaAs Quantum Wells", J. Appl. Phys., vol. 64, p.6562, 1988.