Publications 2005
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Z. H. Feng, S. J. Cai, K. J. Chen and K. M. Lau, "Enhanced-performance of AlGaN-GaN HEMTs grown on groove sapphire substrates", IEEE Electron Device Lett. vol. 26, pp.870-872, 2005.
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Z. H. Feng and K. M. Lau, “Enhanced Luminescence from GaN-Based Blue LEDs Grown on Grooved Sapphire Substrates,” , IEEE Photon. Technol. Lett., vol. PTL-17, p.1812, 2005.
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Z. Cheng, J. Liu, Y. G. Zhou, Y. Cai, K. J. Chen, and K. M. Lau, “Broadband Microwave Noise Characteristics of High-linearity Composite-channel Al0.3Ga0.7N/Al0.05Ga0.95N/GaN HEMTs,” , IEEE Electron Device Lett., vol. 26, pp.521-523, 2005.
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C. S. Chu, Y. G. Zhou, K. J. Chen, and K. M. Lau, “Quality-factor Characterization of Radio-frequency GaN-based Metal-Semiconductor-Metal Planar Inter-digitated Varactors,”, IEEE Electron Device Lett., vol. 26, pp.432-434, 2005.
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Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, “High-Performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-based Plasma Treatment,” , IEEE Electron Device Lett., vol. 26, pp.435-437, 2005.
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Y. G. Zhou, R. M. Chu, J. Liu, K. J. Chen, and K. M. Lau, "Gate leakage in AlGaN/GaN HEMTs and its suppression by optimization of MOCVD growth,", Phys. Sta. Sol.(c), 2, No.7, pp. 2663 – 2667, 2005.
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R. M. Chu, Y. G. Zhou, J. Liu, D. Wang, K. J. Chen, and K. M. Lau, "AlGaN-GaN Double-Channel HEMTs," , IEEE Trans. Electron Devices, vol. 52, pp.438-446, 2005.
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J. Liu, Y. Zhou, R. Chu, Y. Cai, K. J. Chen, and K. M. Lau, “Highly Linear Al0.3Ga0.7N–Al0.05Ga0.95N–GaN Composite-Channel HEMTs,” , IEEE Electron Device Lett., vol. 26, pp.145-147, 2005.
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Y. D. Qi, H. Liang, D. Wang, , and K. M. Lau, “Comparison of Blue and Green InGaN/GaN MQW LEDs grown by Metalorganic Vapor Phase Epitaxy,” , Appl. Phys. Lett., vol. 86, p.101903, 2005.
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S. Jia, Y. Dikme, D. Wang, K. J. Chen, K. M. Lau, and M. Heuken, “AlGaN-GaN HEMTs on Patterned Silicon (111) Substrates,” , IEEE Electron Device Lett., vol. 26, pp.130-132, 2005.
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Y. Cai, Y. G. Zhou, K. J. Chen, and K. M. Lau, “III-Nitride Metal-Insulator-Semiconductor Heterojunction Field-Effect Transistors using Sputtered AlON Thin Films,” , Appl. Phys. Lett., vol. 86, p.032109, 2005.
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D. Wang, S. Jia, K. J. Chen, K. M. Lau, Y. Dikme, P. van Gemmern, Y. C. Lin, H. Kalisch, R. H. Jansen, and M. Heuken, "Micro-Raman scattering study of stress distribution in GaN films grown on patterned Si(111) by metalorganic chemical vapor deposition," , J. of Appl. Phys., vol. 97, p.056103, 2005.
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Z. H. Feng, Y. G. Zhou, S. J. Cai, and K. M. Lau, “Doping Concentration and Structural Dependences of the thermal stability of the 2DEG in GaN-based HEMT structures,”, Jpn. J. of Appl. Phys., vol. 44, L21 – 23, 2005.
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Y. G. Zhou, D. Wang, R. Chu, C.W. Tang, Y. Qi, Z. Lu, K. J. Chen, and K. M. Lau, “Correlation of In-situ reflectance spectra and resistivity of GaN/Al2O3 interfacial layer in metalorganic chemical vapor deposition,” , IEEE/TMS J. Electronic Materials, vol. 34(1), pp.112- 118, 2005.
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Limin Lin, Yi Luo, P.T. Lai, and Kei May Lau, "Effects of oxidation temperature on Ga2O3 film thermally grown on GaN," , Electron Devices and Solid-State Circuits, 2005 IEEE Conference, pp 605 - 608 19-21 Dec. 2005
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Y. Cai, Z. Cheng, C. W. Tang, K. J. Chen, and K. M. Lau, "Monolithic Integration of Enhancement- and Depletion-mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits,", 2005 International Electron Device Meeting (IEDM05), Washington D. C., USA, Dec. 4-7, 2005.
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C. S. Chu, Y. G. Zhou, K. J. Chen, and K. M. Lau, "A novel RF High-Q metal-semiconductor-metal planar inter-digitated varactor based on double-channel AlGaN/GaN HEMT structure,", 2005 IEEE Radio-Frequency Integrated Circuit Symposium (RFIC2005), Long Beach, USA, June 12-14, 2005.