Publications 2006
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L.M. Lin, Yi Luo, P.T. Lai, Kei May Lau, “Influence of oxidation and annealing temperatures on quality of Ga2O3 film grown on GaN,”, Thin Solid Films 515 (2006) 2111–2115
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J. Liu, Y. G. Zhou, J. Zhu, K. M. Lau, and K. J. Chen, "AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch," , Phys. Stat. Sol. (c), vol. 3, No. 6, pp. 2312-2316, 2006.
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R. Wang, Y. Cai, C. -W. Tang, K. M. Lau, and K. J. Chen, "Enhancement-Mode Si3N4/AlGaN/GaN MISHFETs,", IEEE Electron Device Letters, vol. 27, No. 10, pp. 793-795, Oct. 2006.
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Y. Cai, Y. G. Zhou, K. M. Lau, and K. J. Chen, "Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-based Plasma Treatment: From Depletion Mode to Enhancemend Mode,", IEEE Trans. Electron Devices, vol.. 53, No. 9, pp. 2207-2215, Sep. 2006.
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Y. Cai, Z. Cheng, W. C. K. Tang, K. M. Lau, and K. J. Chen, "Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using CF4 Plasma Treatment,", IEEE Trans. Electron Devices, vol.. 53, No. 9, pp. 2223-2230, Sep. 2006.
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K. J. Chen and K. M. Lau, "Core Technologies for III-Nitride Integrated Microsensors(INVITED PAPER),", 6th Emerging Information Technology Conference (EITC'06), Richardson, Texas, USA, Aug. 10-13, 2006.
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R. Wang, Y. Cai, W. Tang, K. M. Lau, and K. J. Chen, "Planar Integration of E/D-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment,", IEEE Electron Device Letters, vol. 27, No. 8, pp. 633-635, Aug. 2006.
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Z. Yang, R. Wang, D. Wang, B. Zhang. K. M. Lau, and K. J. Chen, "GaN on Patterned Silicon (GPS) Technique for GaN-based MEMS,", Sensors and Actuators A: Physical, vol. 130-131, pp. 371-378, Aug. 2006.
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Y. Cai, Y. G. Zhou, K. M. Lau, and K. J. Chen, "Enhancement-Mode AlGaN/GaN HEMTs with Low On-Resistance and Low Knee-Voltage,", IEICE Trans. on Electronics, Vol. E89-C, No. 7, 1025-1030, July, 2006.
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S. Jia, Y. Cai, D. Wang, B. Zhang, K. M. Lau, and K. J. Chen, "Enhancement-Mode AlGaN/GaN HEMTs on Silicon Substrate,", IEEE Trans. on Electron Devices, Vol. 53, No. 6, pp. 1474-1477, June, 2006
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Z. Yang, R. N. Wang, S. Jia, D. Wang, B. S. Zhang, K. M. Lau, and K. J. Chen, “Fabrication of suspended GaN microstructures using GaN-on-patterned-silicon (GPS) technique,”, Phys. Stat. Sol. (a), vol. 203, No. 7, pp. 1721-1724, May 2006.
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Y. Zeng, H.G. Liu, N.G. Tao, C.R. Bolognesi, W. Tang, W. Zhou, and K. M. Lau, “High-Performance Metamorphic InP/GaAsSb/InP “Type-II” DHBTs Grown on GaAs Substrates (Student Paper),”, 2006 Int. Conf. Compound Semiconductor Manufacturing Technology (MANTECH'06), Vancouver, Canada, Apr. 24-27, 2006, pp. 157-159.
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C-W. Tang, L. Jiang, K. M. Lau, and K. J. Chen, "MOCVD Grown Metamorphic InAlAs/InGaAs HEMTs on GaAs Substrates,", 2006 Int. Conf. Compound Semiconductor Manufacturing Technology (MANTECH'06), Vancouver, Canada, Apr. 24-27, 2006, pp. 243-245.
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Z. Feng, S. J. Cai, K. J. Chen, and K. M. Lau, "Isoelectronic Indium Surfactant-doped AlGaN/GaN High Electron Mobility Transistors,", Appl. Phys. Lett., vol. 88, 122113, 2006.
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J. Liu, Y. G. Zhou, J. Zhu, K. M. Lau, and K. J. Chen, "AlGaN/GaN/InGaN/GaN Double Heterojunction HEMTs with an InGaN-Notch for Enhanced Carrier Confinement,", IEEE Electron Device Letters, vol. 27, No.1, pp. 10-12, Jan. 2006
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Z. Yang, R. Wang, D. Wang, B. Zhang. K. M. Lau, and K. J. Chen, "Mechanical Characterization of Suspended GaN Microstructures by GaN-on-Patterned-Silicon Technique,", Appl. Phys. Lett., vol. 88, 041913, Jan. 2006.