Publications 2024
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Ying Xue and Kei May Lau, “III-V Active Devices on Silicon-on-Insulator via Lateral Selective Heteroepitaxy”, Laser & Optoelectronics Progress, Vol. 61, Issue 19, 1913007, 2024 ( Invited, highlighted paper )
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Jie Li, Ying Xue, Ke Xu, Zengshan Xing, Kam Sing Wong, and Kei May Lau, “Large-area single-crystal indium phosphide laterally grown on patterned silicon-on-insulator”, APL Materials, Vol. 12, Issue 11, 111101, 2024
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Qi Lin, Jie Huang, Ying Xue, LIying Lin, Zengshan Xing, Kam Sing Wong, and Kei May Lau, “GaAs Microdisk Lasers with Al2O3 Passivation Selectively Grown on SOI”, ACS Photonics, Vol. 11, Issue 9, pp. 3578−3584, 2024
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Kezhou Fan, Haohan Chen, Aleksandr A. Sergeev, Zengshan Xing, Renqiang Zhu, Kei May Lau, Lijun Wu, and Kam Sing Wong “Efficient Second-Harmonic Generation with Weak Polarization Sensitivity in Gallium Nitride Metasurfaces via Bound States in the Continuum”, Advanced Optical Materials, Vol. 12, Issue 23, 2400815, 2024
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Yu Zhang, Renqiang Zhu, Haolan Qu, Yitian Gu, Huaxing Jiang, Kei May Lau and Xinbo Zou, “Dynamic Reliability Assessment of Vertical GaN Trench MOSFETs With Thick Bottom Dielectric”, IEEE Transactions on Device and Materials Reliability, Vol. 24, Issue 3, pp. 358-364, 2024
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Haitao Du, Yu Zhang, Junmin Zhou, Jiaxiang Chen, Wenbo Ye, Xu Zhang, Qifeng Lyu, Hongzhi Wang, Kei May Lau and Xinbo Zou, “GaN Nanowire n-i-n Diode Enabled High-Performance UV Machine Vision System”, IEEE Transactions on Nanotechnology, Vol. 23, pp. 529-534, 10564119, 2024
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Jie Huang, Qi Lin, Ying Xue, Liying Lin, Zengshan Xing, Kam Sing Wong, and Kei May Lau, “GaAs Templates Selectively Grown on Silicon-on-Insulator for Lasers in Silicon Photonics”, CRYSTAL GROWTH & DESIGN, Vol. 24, Issue 3, pp. 1302−1307, 2024
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Jialun Li,Renqiang Zhu, Ka Ming Wong, and Kei May Lau, “Fully Vertical GaN-on-SiC p-i-n Diodes With BFOM of 2.89 GW/cm2”, JOURNAL OF THE ELECTRON DEVICES SOCIETY, Vol. 12, pp. 318−321, 2024
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Han Gao, Yitian Gu, Yu Zhang, Jialun Li, Junmin Zhou, Haowen Guo, Kei May Lau, and Xinbo Zou, “545-mA/mm E-Mode Recessed-Gate GaN MOSHEMT Vth＞4V by Ion Beam Etching”, IEEE ELECTRON DEVICE LETTERS, Vol. 45, Issue 6, pp. 968−971, 2024