Current Research Areas

III-V Laser and Photodetectors Integration on Si

Monolithic integration of efficient III-V lasers and photodetectors on Si represents the crux for next-generation fully-integrated Si-photonics. Our research has been focusing on the direct growth of III-V lasers and photodetectrs on (001) Si platforms using metal-organic chemical vapor deposition (MOCVD). This involves developing technologies to directly grow high quality III-V materials, with different compositions and architectures, on lattice-mismatched industry-standard (001) wafers. We have demonstrated lasers and photodectors on Si, with different wavelengths and dimensions, through embedding quantum structures such as quantum dots, dashes, wires and wells.

Details >>

III-Nitride Power Electronics

Featuring a wide band gap and large critical electric field, III-nitride based electron devices are emerging for next generation energy-efficient power conversion applications. Our group is developing cost-effective high-performance III-nitride power transistors and diodes for high-voltage switching applications. This covers heterogeneous epitaxy of high-quality III-nitride materials on large-scale silicon substrates via MOCVD, design of novel device structures based on device physics and compatibility with state-of-the-art clean-room fabrication. Cutting-edge high-performance enhancement-mode GaN transistors are being explored with approaches including p-type GaN gate technology and vertical MOSFET structure. Through the establishment of high-performance GaN transistors and diodes, we are aiming at deepening the understanding of the III-nitride electron device physics, uncovering the full potential of III-nitride materials, and facilitating the wide employments of III-nitride devices for future power applications.

Details >>

III-Nitride Monolithic Micro-LED Micro-display Technology

Capable of delivering extremely high-brightness solutions compared to existing technologies including liquid crystal display (LCD) and organic light emitting diode (OLED), semiconductor-based micro-LED has been recognized as a favorable candidate for a wide variety of applications including wearable electronics, compact projection and virtual/augmented reality (VR/AR).

Details >>