Current Research Areas

Monolithic Integration of III-V Optoelectronic Devices on Si

Efficient on-chip III-V optoelectronic devices on Si, especially lasers has been the major challenge for silicon photonics to synergize the cost-effective electronics and the high-speed photonics. Our research has been focusing on the direct epitaxy of various III-V-on-Si platforms using MOCVD and the implementation of III-V active devices. We have established high-quality III-V-on-Si platforms by advancing epitaxy techniques, schemes and active media such as quantum dots, quantum dashes and quantum wells. By incorporating novel device designs and fabrication technologies, high performance III-V active optoelectronic devices on Si have been achieved. We are aiming at exploring versatile III-V-on-Si platforms and boosting the device performance and functionality, thereby realizing the fully integrated photonics, and unlock the power of low-cost silicon photonics.

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III-Nitride Power Electronics

Featuring a wide band gap and large critical electric field, III-nitride based electron devices have demonstrated great potential for energy-efficient power conversion applications. Our group is developing cost-effective high-performance III-nitride power devices for high-voltage switching applications. This covers heterogeneous epitaxy of high-quality III-nitride materials on large-scale Si as well as SiC substrates via MOCVD, design of novel device structures based on device physics, and development of advanced process techniques compatible with state-of-the-art clean-room fabrication. Cutting-edge high-performance enhancement-mode GaN transistors are being explored with approaches including p-type GaN gate technology and vertical MOSFET structure. Through the establishment of high-performance GaN transistors and diodes, we are aiming at deepening the understanding of the III-nitride electron device physics, uncovering the full potential of III-nitride materials, and facilitating the wide employments of III-nitride devices for future power applications.

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III-Nitride Monolithic Micro-LED Micro-display Technology

Capable of delivering extremely high-brightness solutions compared to existing technologies including liquid crystal display (LCD) and organic light emitting diode (OLED), semiconductor-based micro-LED has been recognized as a favorable candidate for a wide variety of applications including wearable electronics, compact projection and virtual/augmented reality (VR/AR).

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