Current Members

Chair Professor

Kei May LAU 劉紀美

PhD, Rice University

Research Professor

Elected member, US National Academy of Engineering

Fellow, IEEE

Fellow, OSA

Fellow, Hong Kong Academy of Engineering Sciences; Fellow, CSR

Tel: 2358 7049

Office: Rm2452

Email:

Kei May Lau is a Research Professor at the Hong Kong University of Science & Technology (HKUST). She received her degrees from the University of Minnesota and Rice University and served as a faculty member at the University of Massachusetts/Amherst before joining HKUST in the summer of 2000. Lau is a Fellow of the National Academy of Engineering, IEEE, Optica (formerly OSA), and the Hong Kong Academy of Engineering Sciences. She was also a recipient of the IPRM award, IET J J Thomson medal for Electronics, Optica Nick Holonyak Jr. Award, IEEE Photonics Society Aron Kressel Award, US National Science Foundation (NSF) Faculty Awards for Women (FAW) Scientists and Engineers, and Hong Kong Croucher Senior Research Fellowship. She was an Editor of the IEEE Transactions on Electron Devices and Electron Device Letters, an Associate Editor for the Journal of Crystal Growth and Applied Physics Letters. Lau’s research work focuses on the development of monolithic integration of semiconductor devices and systems on industry-standard silicon substrates by MOCVD. She was an early explorer of this approach and has produced record-breaking results in this area. In 2008 her group was the first to demonstrate the highest mobility and millimeter-wave (fT > 200 GHz) III- V transistors lattice-matched to InP grown directly on Si. She also led the development of 1.5 µm room-temperature electrically pumped III-V quantum dot lasers epitaxially grown on CMOS-standard (001) Si substrate. Recently, her group developed the lateral aspect ratio trapping (LART) technique to grow III-V active devices in the same plane as the Si layer enabling efficient coupling with Si waveguides on silicon-on-insulator (SOI). They demonstrated telecom InGaAs/InP quantum well lasers and high-performance photodetectors selectively grown on SOI by LART.


 

Senior Technical Officer

Sophie, Ruiqing ZHU 朱睿卿

M.Phil. in ELEC, HKUST, Hong Kong

Research interest: III-nitride LEDs and epitaxy by MOCVD

Tel: 2358 8371

Office: Rm1043

Email:

 

Research Assistant Professor

Ying XUE 薛莹

Ph.D. in ELEC, HKUST, Hong Kong

Research interest: III-V optoelectronic devices on Si for photonic integration

Tel: 2358 8843

Office: Rm4020

Email:

 

Postdoc

Jie Huang 黄杰

Ph.D. in ELEC, HKUST, Hong Kong

Research interest: III-V epitaxy by MOCVD

Tel: 2358 8843

Office: Rm4020

Email:

 

Postgraduate Student

Yaying LIU 劉亞瑩

Master in Nanjing University, Nanjing, China

Research interest: to be updated

Tel: 2358 8843

Office: Rm4020

Email:

 

Jie LI 李洁

Bachelor in University of Electronic Science and Technology of China, Chengdu, China

Research interest: III-V epitaxy by MOCVD

Tel: 2358 8843

Office: Rm4020

Email:

 

Qi LIN 林祺

Bachelor in University of Electronic Science and Technology of China, Chengdu, China

Research interest: III-V lasers

Tel: 2358 8843

Office: Rm4020

Email:

 

Wen GU 谷文

Master in Institute of Semiconductors, Chinese Academy of Sciences, China

Research interest: III-V lasers

Tel: 2358 8843

Office: Rm4020

Email:

 

Jialun LI 李家纶

Bachelor in ShanghaiTech University, China

Research interest: III-nitride transistors

Tel: 2358 8843

Office: Rm4020

Email:

 

Zhao Boqun 趙博群

Bachelor in Shandong University, China

Research interest: III-V lasers and photodetectors

Tel: 2358 8843

Office: Rm4020

Email:

 

Yuanzhi He 賀源值

Bachelor in Southeast University, China

Research interest: III-nitride transistors

Tel: 2358 8843

Office: Rm4020

Email:

 

UG Internship Student

You Wu 吳優

Bachelor in Harbin Institute of Technology, Shenzhen, China

Research interest: III-V Lasers

Tel: 2358 8843

Office: Rm4020

Email:

 

Research Assistant

Ziyang Gong 龔子洋

Bachelor in Sun Yatsen University, China

Research interest: III-nitride Transistors

Tel: 2358 8843

Office: Rm4020

Email: