Photonics Technology Center

Kei May LAU 劉紀美

PhD, Rice University

Research Professor, EMIA

Member, NAE

Fellow, IEEE

Fellow, OSA

Fellow, Hong Kong Academy of Engineering Sciences; Fellow, CSR

Tel: 2358 7049

Office: Rm2452

Email: eekmlau@ust.hk

Kei May Lau is a Research Professor at the Hong Kong University of Science & Technology (HKUST). She received her degrees from the University of Minnesota and Rice University and served as a faculty member at the University of Massachusetts/Amherst before joining HKUST in the summer of 2000. Lau is an elected member of the US National Academy of Engineering, a Fellow of IEEE, Optica (formerly OSA), and the Hong Kong Academy of Engineering. She was also a recipient of the IPRM award, IET J J Thomson medal for Electronics, Optica Nick Holonyak Jr. Award, IEEE Photonics Society Aron Kressel Award, US National Science Foundation (NSF) Faculty Awards for Women (FAW) Scientists and Engineers, and Hong Kong Croucher Senior Research Fellowship. She was an Editor of the IEEE Transactions on Electron Devices and Electron Device Letters, an Associate Editor for the Journal of Crystal Growth and Applied Physics Letters. Lau’s research work focuses on the development of monolithic integration of semiconductor devices and systems on industry-standard silicon substrates by MOCVD. She was an early explorer of this approach and has produced record-breaking results in this area. In 2008 her group was the first to demonstrate the highest mobility and millimeter-wave (fT > 200 GHz) III- V transistors lattice-matched to InP grown directly on Si. She also led the development of 1.5 µm room-temperature electrically pumped III-V quantum dot lasers epitaxially grown on CMOS-standard (001) Si substrate. Recently, her group developed the lateral aspect ratio trapping (LART) technique to grow III-V active devices in the same plane as the Si layer enabling efficient coupling with Si waveguides on silicon-on-insulator (SOI). They demonstrated telecom InGaAs/InP quantum well lasers and high-performance photodetectors selectively grown on SOI by LART.

Sophie, Ruiqing ZHU 朱睿卿

M.Phil. in ELEC, HKUST, Hong Kong

Research interest: III-nitride LEDs and epitaxy by MOCVD

Tel: 2358 8371

Office: Rm1043

Email: eerqzhu@ust.hk

Renqiang ZHU 朱仁强

Ph.D. in ECE, HKUST, Hong Kong

Dr. Renqiang Zhu is a Research Assistant Professor (RAP) in the Division of Emerging Interdisciplinary Areas (EMIA), Hong Kong University of Science and Technology (HKUST). He received his Bachelor’s degree from University of Electronic Science and Technology of China (UESTC) in 2017 and his Ph.D. from HKUST in 2022. His research work focuses on the growth and fabrication of III-Nitride power devices, including GaN lateral HEMTs, vertical GaN power diodes & transistor. He has published more than 30 journal and conference papers and owned 8 patents related to III-Nitride power electronics.

Tel: 2358 8372

Office: Rm1043

Email: zhurenqiang@ust.hk

Jian LI 李健

Ph.D. in Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

Dr. Jian Li is a visiting scholar in the Division of Emerging Interdisciplinary Areas (EMIA), Hong Kong University of Science and Technology (HKUST). He received his Ph.D. from the Institute of Semiconductors, Chinese Academy of Sciences in 2017, and is an associate research fellow in institute of semiconductors, CAS, Beijing. His research interests is the lll-V Si material growth and optoelectronic devices fabrications.

Tel: 2358 8372

Office: Rm1043

Email: jalain@ust.hk

Hui GUO 郭慧

Ph.D. in Nanjing University, Nanjing, China

Dr. Hui Guo is a postdoctoral research fellow in the Division of Emerging Interdisciplinary Areas (EMIA), Hong Kong University of Science and Technology (HKUST). She received her Ph.D degree in electrical science and engineering from Nanjing University in 2022. Her research interests are in the area of wide bandgap semiconductors and their power devices, especially the fabrication and reliability of GaN-based power devices. She has published more than 30 papers in these research fields and owned more than 10 Chinese patents.

Tel: 2358 8372

Office: Rm1043

Email: huiguo@ust.hk

Xiangquan LIU 劉香全

Ph.D. in Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

Dr. Xiangquan LIU is a postdoctoral fellow in the Division of Emerging Interdisciplinary Areas (EMIA), Hong Kong University of Science and Technology (HKUST). He received his Ph.D. from the Institute of Semiconductors, Chinese Academy of Sciences in 2022, and was awarded the honor of Outstanding Graduate (doctor) of Beijing. Previously, he mainly studied silicon-based optoelectronic Group-IV materials and devices. Now, his research work focuses on the III-V growth and optoelectronic devices.

Tel: 2358 8372

Office: Rm1043

Email: liuxiangquan@ust.hk

Wen GU 谷文

Master in Institute of Semiconductors, Chinese Academy of Sciences, China

Research interest: III-V lasers

Tel: 2358 8372

Office: Rm1043

Email: wguae@connect.ust.hk

Jialun LI 李家纶

Bachelor in ShanghaiTech University, China

Research interest: III-nitride transistors

Tel: 2358 8372

Office: Rm1043

Email: jliib@connect.ust.hk

Zhao Boqun 趙博群

Bachelor in Shandong University, China

Research interest: III-V lasers and photodetectors

Tel: 2358 8372

Office: Rm1043

Email: bzhaoas@connect.ust.hk

Yuanzhi He 賀源值

Bachelor in Southeast University, China

Research interest: III-nitride transistors

Tel: 2358 8372

Office: Rm1043

Email: yheda@connect.ust.hk

Ziyang Gong 龔子洋

Bachelor in Sun Yatsen University, China

Research interest: III-V based Transistors

Tel: 2358 8372

Office: Rm1043

Email: zgongai@connect.ust.hk

Jiaqi LIU 刘佳琪

Master in National University of Defense Technology, Changsha, China

Research interest: III-V Epitaxy and Optoelectronic Devices

Tel: 2358 8372

Office: Rm1043

Email: jliuhb@connect.ust.hk

Xuancong Fan 范宣聪

Master in South China Normal University, Guangzhou, China

Research interest: III-V based Power Devices

Tel: 2358 8372

Office: Rm1043

Email: eefanxcsd@ust.hk

Haowen Luo 羅皓文

Bachelor in Central Sourth University, Changsha, China

Research interest: III-V based Power Devices

Tel: 2358 8372

Office: Rm1043

Email: luohaowen@ust.hk

Liangliang Xu 許亮亮

Bachelor in University of Electronic Science and Technology of China, Chengdu, China

Research interest: III-V based Transistors

Tel: 2358 8372

Office: Rm1043

Email: xuliangliang@ust.hk