Current Members

Chair Professor

Kei May LAU 劉紀美

PhD, Rice University

Fang Professor of Engineering, Chair Professor

Fellow, IEEE

Fellow, OSA

Fellow, Hong Kong Academy of Engineering Sciences; Fellow, CSR

Tel: 2358 7049

Office: Rm2452

Email:

Kei May Lau received the B.S. and M.S. degrees in physics from the University of Minnesota, Minneapolis and the Ph.D. Degree in electrical engineering from Rice University, Houston, Texas.

From 1980 to 1982, she was a Senior Engineer at M/A-COM Gallium Arsenide Products, Inc., where she worked on epitaxial growth of GaAs for microwave devices, development of high-efficiency and mm-wave IMPATT diodes, and multi-wafer epitaxy by the chloride transport process. In the fall of 1982, she joined the faculty of the Electrical and Computer Engineering Department at the University of Massachusetts/Amherst, where she became a full professor in 1993. She initiated metalorganic chemical vapor deposition (MOCVD), compound semiconductor materials and devices programs at UMass. Her research group performed studies on heterostructures, quantum wells, strained-layers, III-V selective epitaxy, as well as high-frequency and photonic devices. Professor Lau spent her first sabbatical leave in 1989 at the MIT Lincoln Laboratory. She developed acoustic sensors at the DuPont Central Research and Development Laboratory in Wilmington, Delaware during her second sabbatical leave ('95-'96). In the fall of 1998, she was a visiting professor at the Hong Kong University of Science and Technology (HKUST), where she joined the regular faculty since the summer of 2000. She established the Photonics Technology Center for devoted efforts in wide-gap semiconductor materials and devices. Professor Lau is a Chair Professor of Electronic and Computer Engineering at HKUST.

Professor Lau is a Fellow of the IEEE, OSA, and the Hong Academy of Engineering Sciences. She is also a recipient of the IEEE Photonics Society Aron Kressel Award, US National Science Foundation (NSF) Faculty Awards for Women (FAW) Scientists and Engineers (1991) and Hong Kong Croucher Senior Research Fellowship (2008). She served on the IEEE Electron Devices Society Administrative Committee and was an Editor of the IEEE Transactions on Electron Devices (1996-2002), an Associate Editor for the Journal of Crystal Growth and Applied Physics Letters. She is now an Editor of the IEEE Electron Device Letters.


 

Senior Technical Officer

Wilson, Chak Wah TANG 鄧澤華

M.Sc. in E.E., National Cheng Kung University, Taiwan

Research interest: III-nitride and III-V material growth, development and characterization.

Tel: 2358 8372

Office: Rm1043

Email:

 

Postdoctoral Research Associate

Huaxing JIANG 蔣華杏

PhD, ECE, HKUST, Hong Kong

Research interest: III-nitride based devices for power and RF applications

Tel: 3469 2726

Office: Rm2441

Email:

 

Yangfeng LI 李阳鋒

PhD, the Institute of Physics, Chinese Academy of Science, China

Research interest: III-Nitride material epitaxy by MOCVD

Tel: 2358 8372

Office: Rm1049

Email:

 

Yu HAN 韓羽

Ph.D., ECE, HKUST

Research interest: III-V epitaxy on Si by MOCVD

Tel: 2358 8843

Office: Rm4020

Email:

 

Postgraduate Student

Xu ZHANG 仉旭

BSc in the University of Electronic Science and Technology of China, Chengdu, China

Research interest: III-nitride diodes

Tel: 2358 8843

Office: Rm3121A

Email:

 

Si ZHU 朱偲

Bachelor in Huazhong University of Science and Technology, China

Research interest: III-V lasers on Si

Tel: 2358 8843

Office: Rm4020

Email:

 

Chunyu ZHAO 趙春雨

M.Sc., Changchun University of Science and Technology, China

Research interest: III-nitride lasers

Tel: 2358 8371

Office: Rm1049

Email:

 

Zhao YAN 闫曌

BEng in University of Electronic Science and Technology of China, Chengdu, China

Research interest: III-V epitaxy by MOCVD

Tel: 2358 8843

Office: Rm4020

Email:

 

Qifeng LYU 呂奇峰

Master in Institute of Semiconductors, Chinese Academy of Science, China

Research interest: III-nitride transistors

Tel: 2358 8843

Office: Rm3121A

Email:

 

Wei LUO 罗伟

Bachelor in Electronic Science and Engineering, Southeast University, China

Research interest: III-V epitaxy by MOCVD

Tel: 2358 8843

Office: Rm4020

Email:

 

Renqiang ZHU 朱仁强

Bachelor in University of Electronic Science and Technology of China, Chengdu, China

Research interest: III-nitride transistors

Tel: 2358 8843

Office: Rm3121A

Email:

 

Peian LI 李沛安

BSc in Tsinghua University, Beijing, China

Research interest: III-nitride LEDs

Tel: 2358 8843

Office: Rm3121A

Email:

 

Ying XUE 薛莹

Bachelor in Shandong University, China

Research interest: III-V lasers

Tel: 2358 8843

Office: Rm4020

Email:

 

Liying LIN 林立穎

Bachelor in Fudan University, China

Research interest: to be updated

Tel: 2358 8843

Office: Rm3121A

Email:

 

Longheng QI 漆龍恒

Bachelor in University of Electronic Science and Technology of China, Chengdu, China

Research interest: to be updated

Tel: 2358 8843

Office: Rm3121A

Email:

 

Yaying LIU 劉亞瑩

Master in Nanjing University, Nanjing, China

Research interest: to be updated

Tel: 2358 8843

Office: Rm3121A

Email:

 

Jie Huang 黄杰

M.Sc., Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, China

Research interest: III-V epitaxy by MOCVD

Tel: 2358 8372

Office: Rm4020

Email:

 

Zhouyang XU 徐周阳

Bachelor in Fudan University, Shanghai, China

Research interest: to be updated

Tel: 2358 8372

Office: Rm4020

Email:

 

Jie LI 李洁

Bachelor in University of Electronic Science and Technology of China, Chengdu, China

Research interest: to be updated

Tel: 2358 8372

Office: Rm4020

Email:

 

Qi LIN 林祺

Bachelor in University of Electronic Science and Technology of China, Chengdu, China

Research interest: to be updated

Tel: 2358 8372

Office: Rm4020

Email: