Current Research

In-plane III-V lasers and photodetectors on SOI for integrated photonics

III-V lasers and photodetectors on SOI by vertical aspect ratio trapping

Fig.1. III-V lasers and photodetectors grown on SOI by vertical selective epitaxy.

Related publications:

  1. Yu Han, Wai Kit Ng, Chao Ma, Qiang Li, Si Zhu, Christopher CS Chan, Kar Wei Ng, Stephen Lennon, Robert A. Taylor, Kam Sing Wong and Kei May Lau " Room-temperature InP/InGaAs nano-ridge lasers grown on Si and emitting at telecom bands ", Optica ,  Vol. 5, No. 8, pp. 918-923, 2018

  2. Yu Han, Wai Kit Ng, Ying Xue, Kam Sing Wong and Kei May Lau, "Room temperature III-V nanolasers with distributed Bragg reflectors epitaxially grown on (001) silicon-on-insulators", Photonics Research ,  vol. 7, no. 9, pp.1081-1086, 2019

    3. li>

    Ying Xue, Yu Han, Yi Wang, Zunyue Zhang, Hon Ki Tsang, and Kei May Lau, "Bufferless III–V photodetectors directly grown on (001) silicon-on-insulators", Optics Letters,  vol. 45, no. 7, pp.1754-1757, 2020

    li>

    Yu Han, Wai Kit Ng, Ying Xue, Qiang Li, Kam Sing Wong, and Kei May Lau, "Telecom InP/InGaAs nanolaser array directly grown on (001) silicon-on-insulator", Optics Letters ,  vol. 44, no. 4, pp.767-770, 2019

    li>

    Yu Han, Kei May Lau, "III-V lasers selectively grown on (001) silicon", Journal of Applied Physics,  vol. 128, no. 20, pp.200901, 2020

  3. Yu Han, Zhao Yan, Wai Kit Ng, Ying Xue, Kam Sing Wong and Kei May Lau, "Bufferless 1.5 um III-V lasers grown on Si-photonics 220 nm silicon-on-insulator platforms", Optica,  vol. 7, no. 2, pp.148-153, 2020

III-V lasers and photodetectors on SOI by lateral aspect ratio trapping

Fig.2. III-V lasers and photodetectors grown on SOI by lateral selective epitaxy.

Related publications:

  1. Yu Han, Ying Xue, and Kei May Lau, "Selective lateral epitaxy of dislocation-free InP on silicon-on-insulator", Applied Physics Letters ,  vol. 114, no. 19, p.192105, 2019

  2. Yu Han, Zhao Yan, Ying Xue, and Kei May Lau, "Micrometer-scale InP selectively grown on SOI for fully integrated Si-photonics", Applied Physics Letters,  vol. 117, no. 05, pp.052102, 2020

  3. Ying Xue, Yu Han, Yeyu Tong, Zhao Yan, Yi Wang, Zunyue Zhang, Hon Ki Tsang, and Kei May Lau, “High-performance III-V photodetectors on a monolithic InP/SOI platform”, Optica,  Vol. 8, no. 9, pp. 1204-1209, 2021

  4. Zhao Yan, Yu Han, Liying Lin, Ying Xue, Chao Ma, Wai Kit Ng, Kam Sing Wong, and Kei May Lau, “A monolithic InP/SOI platform for integrated photonics”, Light: Science & Applications,  Vol. 10, no. 200, 2021

  5. Jie Li, Ying Xue, Liying Lin, Zengshan Xing, Kam Sing Wong, and Kei May Lau, “Telecom InGaAs/InP Quantum Well Lasers Laterally Grown on Silicon-on-Insulator”, Journal of Lightwave Technology,  Vol. 40, Issue 16, pp. 5631-5635, 2022

  6. Jie Li, Ying Xue, Zhao Yan, Yu Han and Kei May Lau, “III-V selective regrowth on SOI for telecom lasers in silicon photonics”, Journal of Applied Physics,  Vol. 133, Issue 13, p. 133103, 2023

In-plane integration of III-V active devices and Si passive components

Fig.3. Efficient coupling between III-V and Si using butt-coupling scheme

Related publications:

  1. Yu Han, Ying Xue, Zhao Yan, and Kei May Lau, "Selectively Grown III-V Lasers for Integrated Si-Photonics", Journal of Lightwave Technology ,  vol. 39, no. 4, pp.940-948, 2021

  2. Ying Xue, Yu Han, Yi Wang, Jie Li, Jingyi Wang, Zunyue Zhang, Xinlun Cai, Hon Ki Tsang, and Kei May Lau, “High-speed and low dark current silicon-waveguide-coupled III-V photodetectors selectively grown on SOI”, Optica,  Vol. 9, Issue 11, pp. 1219-1226, 2022