Current Research

Lateral Enhancement-mode GaN-on-Si Transistors

High electron mobility transistors with p-GaN gates

High-performance p-GaN gate HEMTs on Si are demonstrated with remained high-voltage OFF-state blocking capability after forward gate breakdown.

Fig.1. (a)Cross-sectional schematic. (b) transfer characteristics. (c) output characteristics. (d) OFF-state breakdown performance.

Related publications:

  1. Huaxing Jiang, Renqiang Zhu, Qifeng Lyu, and Kei May Lau, "High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown", IEEE Electron Device Letters ,  vol. 40, no. 4, 2019