Current Research
Lateral Enhancement-mode GaN-on-Si Transistors
High electron mobility transistors with p-GaN gates High-performance p-GaN gate HEMTs on Si are demonstrated with remained high-voltage OFF-state blocking capability after forward gate breakdown.
Fig.1. (a)Cross-sectional schematic. (b) transfer characteristics. (c) output characteristics. (d) OFF-state breakdown performance. Related publications:
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